Results of a gallium phosphide photovoltaic junction with an AR coating under concentration of natural sunlight
نویسنده
چکیده
A gallium phosphide (GaP) photovoltaic junction is grown by molecular beam epitaxy (MBE) on a GaP substrate. An anti-reflection coating of polymethyl methacrylate (PMMA) is applied and the cell is measured under concentrations of 1 and 10.7 in an outdoor setting. Efficiencies up to 2.6% and open circuit voltages up to 1.57 V are reported. & 2011 Elsevier B.V. All rights reserved.
منابع مشابه
Simulation assisted design of a gallium phosphide n–p photovoltaic junction
A gallium phosphide photovoltaic junction is reported. Using a n–p structure, a gallium phosphide junction is grown on a gallium phosphide substrate by molecular beam epitaxy. Junction design is presented with measurements of the dark and light response. The light current was measured under an illumination of air mass (AM) 1.5. Without an anti-reflective coating, a Voc of 1.53V and a Jsc of 0:9...
متن کاملIncreased photovoltaic power output via diffractive spectrum separation.
In this Letter, we report the preliminary demonstration of a new paradigm for photovoltaic power generation that utilizes a broadband diffractive-optical element (BDOE) to efficiently separate sunlight into laterally spaced spectral bands. These bands are then absorbed by single-junction photovoltaic cells, whose band gaps correspond to the incident spectral bands. We designed such BDOEs by uti...
متن کاملGallium Phosphide IMPATT Sources for Millimeter-Wave Applications
The potentiality of millimter-wave (mm-wave) double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on a wide bandgap (WBG) semiconductor material, Gallium Phosphide (GaP) has been explored in this paper. A non-sinusoidal voltage excited (NSVE) large-signal simulation method has been used to study the DC and high frequency characteristics of DDR GaP IMPATTs dsigned to ope...
متن کاملPerformance enhancement of a graphene-zinc phosphide solar cell using the electric field-effect.
The optical transparency and high electron mobility of graphene make it an attractive material for photovoltaics. We present a field-effect solar cell using graphene to form a tunable junction barrier with an Earth-abundant and low cost zinc phosphide (Zn3P2) thin-film light absorber. Adding a semitransparent top electrostatic gate allows for tuning of the graphene Fermi level and hence the ene...
متن کاملGallium and Arsenic doped on (4, 4) armchair and (8, 0) zigzag models of Boron phosphide nanotubes: NMR study
Abstract The structural and electrostatic properties of the single-walled two representative (8, 0) zigzag and (4, 4) armchair models of pristine and GaAs-doped on boron phosphide nanotubes (BPNTs) was investigated by calculating the nuclear magnetic resonance tensors and with performing the density function theory. The geometrical structures of all representative pristine and GaAs-doped mode...
متن کامل